Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements

The information about the standard:

Designation standards: ASTM F1153-92(1997)
Note: WITHDRAWN
Publication date standards: 1.1.1992
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Category: Technical standards ASTM

Annotation of standard text ASTM F1153-92(1997) :

Keywords:
Average carrier concentration, Calibration-semiconductor instrumentation, Capacitance, Contamination-semiconductors, Defects-semiconductors, Dielectric constant (permittivity)/dissipation factor, Doping concentration, Electrical conductors-semiconductors, Electromagnetic interference, Equilibrium capacitance, Fixed oxide charge, Flatband capacitance/voltage, Interfacial tension, Inversion, Meal-oxide-silicon (MOS) structures, Minimum depletion layer capacitance