
Test Method for Estimating Electromigration Median Time-To-Failure and Sigma of Integrated Circuit Metallizations
STANDARD published on 1.1.1989
Designation standards: ASTM F1260-89
Note: WITHDRAWN
Publication date standards: 1.1.1989
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Category: Technical standards ASTM
Keywords:
Accelerated aging/testing-semiconductors, Ambient stress temperature, Current-density stress, Defects-semiconductors, Electrical conductors-semiconductors, Electromigration, Failure end point-electronic components/devices, Integrated circuits, Metallization, Microelectronic device processing, Sigma, Silicon-semiconductor applications, Stress-electronic components/devices, Temperature tests-semiconductors, Test structures, Time to failure, Voltage