ASTM F95-89(2000)

Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)

STANDARD published on 1.1.2000

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The information about the standard:

Designation standards: ASTM F95-89(2000)
Note: WITHDRAWN
Publication date standards: 1.1.2000
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Category: Technical standards ASTM

Annotation of standard text ASTM F95-89(2000) :

Keywords:
epi, epi thickness, epitaxial layer, FTIR, index of refraction, IR, layer thickness, spectrophotometer, ICS Number Code 29.045 (Semiconducting materials)