ASTM F996-10

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

STANDARD published on 1.5.2010

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The information about the standard:

Designation standards: ASTM F996-10
Note: WITHDRAWN
Publication date standards: 1.5.2010
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Category: Technical standards ASTM

Annotation of standard text ASTM F996-10 :

Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes, Current measurement--semiconductors, Electrical conductors (semiconductors), Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure--electronic components/devices, Silicon semiconductors, Threshold voltage