Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
STANDARD published on 1.5.2010
Designation standards: ASTM F996-10
Note: WITHDRAWN
Publication date standards: 1.5.2010
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Category: Technical standards ASTM
Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes, Current measurement--semiconductors, Electrical conductors (semiconductors), Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure--electronic components/devices, Silicon semiconductors, Threshold voltage