GB/T 14863-2013

Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes

STANDARD published on 31.12.2013

English, Chinese -
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The information about the standard:

Designation standards: GB/T 14863-2013
Note: WITHDRAWN
Publication date standards: 31.12.2013
Country: Chinese technical standard
Category: Technical standards GB