GB/T 48164.1-2026

Semiconductor devices—Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET)—Part 1: Test method for bias temperature instability

STANDARD published on 28.8.2026

English, Chinese -
electronic design (pdf) (ON REQUEST)

English, Chinese -

Print design (ON REQUEST)

The information about the standard:

Designation standards: GB/T 48164.1-2026
Note: Execute Date: march 2027
Publication date standards: 28.8.2026
Country: Chinese technical standard
Category: Technical standards GB