GB/T 48164.2-2026

Semiconductor devices—Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET)—Part 2: Test method for bipolar degradation due to body diode operation

STANDARD published on 28.8.2026

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The information about the standard:

Designation standards: GB/T 48164.2-2026
Note: Execute Date: march 2027
Publication date standards: 28.8.2026
Country: Chinese technical standard
Category: Technical standards GB