GB/T 48170-2026

Dynamic on-resistance test method guidelines for Gallium Nitride High Electron Mobility Transistor (GaN HEMT) based power conversion devices

STANDARD published on 28.8.2026

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The information about the standard:

Designation standards: GB/T 48170-2026
Note: Execute Date: march 2027
Publication date standards: 28.8.2026
Country: Chinese technical standard
Category: Technical standards GB