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IEC 62373-1-ed.1.0

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

STANDARD published on 15.7.2020

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The information about the standard:

Designation standards: IEC 62373-1-ed.1.0
Publication date standards: 15.7.2020
Approximate weight : 300 g (0.66 lbs)
Country: International technical standard
Category: Technical standards IEC

Annotation of standard text IEC 62373-1-ed.1.0 :

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method. L’IEC 62373-1:2020 fournit la methode de mesure pour un essai rapide de BTI (instabilite en temperature sous polarisation) des transistors a effet de champ metal-oxyde-semiconducteurs (MOSFET) a base de silicium. Le present document definit egalement les termes relatifs a la methode d’essai de BTI conventionnelle.