IEC 63068-5-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 5: Test method for defects using X-ray topography

STANDARD published on 6.10.2026

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The information about the standard:

Designation standards: IEC 63068-5-ed.1.0
Publication date standards: 6.10.2026
The number of pages: 31
Approximate weight : 93 g (0.21 lbs)
Country: International technical standard
Category: Technical standards IEC

Annotation of standard text IEC 63068-5-ed.1.0 :

IEC 63068-5:2026 provides definitions and guidance in use of X-ray topography inspection system for detecting defects in silicon carbide (SiC) homoepitaxial wafers. Additionally, this document exemplifies X-ray topographic images to enable the detection and categorization of defects in SiC homoepitaxial wafers.