Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon

The information about the standard:

Designation standards: ISO 12406:2010
Publication date standards: 8.11.2010
The number of pages: 13
Approximate weight : 39 g (0.09 lbs)
Country: International technical standard
Category: Technical standards ISO

Annotation of standard text ISO 12406:2010 :

Description / Abstract: ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.