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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: medium current rectifier diodes (1-100 ampere rating).
WITHDRAWN published on 30.9.1969
Selected format:Detail specification for medium current rectifier diodes. 3 A, 300 V, 600 V, 900 V, 1200 V, hermetically sealed. Full assessment level.
WITHDRAWN published on 15.6.1974
Selected format:Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high current rectifier diodes (greater than 50 ampere rating).
WITHDRAWN published on 29.5.1970
Selected format:Rules for the preparation of detail specifications for semiconductor devices of assessed quality: controlled avalanche rectifier diodes.
WITHDRAWN published on 12.1.1972
Selected format:Dentistry. Brazing materials.
WITHDRAWN published on 30.11.2006
Selected format:Rules for the preparation of detail specifications for semiconductor devices of assessed quality: rectifier bridges. Ambient rated, single phase, in solid (plastics) encapsulation.
WITHDRAWN published on 15.10.1977
Selected format:Optics and optical instruments. Optical transfer function. Definitions and mathematical relationships.
WITHDRAWN published on 15.2.1996
Selected format:Optics and photonics. Optical transfer function. Definitions and mathematical relationships.
WITHDRAWN published on 28.9.2007
Selected format:Optics and optical instruments. Optical transfer function. Principles and procedures of measurement.
WITHDRAWN published on 15.3.1996
Selected format:Optics and photonics. Optical transfer function. Principles and procedures of measurement.
WITHDRAWN published on 31.10.2012
Selected format:Latest update: 2026-04-30 (Number of items: 2 275 280)
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