Rules for the preparation of detail specifications for semiconductor devices of assessed quality: switching transistors.

WITHDRAWN published on 1.1.1982

Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level.

WITHDRAWN published on 15.7.1978

Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level.

WITHDRAWN published on 15.7.1978

Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level.

WITHDRAWN published on 15.7.1978

Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level.

WITHDRAWN published on 15.7.1978

Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level.

WITHDRAWN published on 15.1.1979

Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level.

WITHDRAWN published on 15.1.1979

Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level.

WITHDRAWN published on 15.1.1979

Rules for the preparation of detail specifications for semiconductor devices of assessed quality: transistors (general).

WITHDRAWN published on 1.1.1982

Plastics. Basic materials for polyurethanes. Pure isocyanates. Analysis of isocyanate groups.

WITHDRAWN published on 15.7.1997