(Detailed specifications of electronic components. 3DD325 silicon NPN. Environmental rated low frequency amplifying transistor (for certification))

WITHDRAWN published on 1.1.1988

Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplification

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon single phase bridge rectifier type for QL 62

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2CC22 and 2CC27

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2cc23 and 2cc28

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon frequency modulated variable capacitance diodes for types 2CC24 and 2CC29

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon frequency modulated variable capacitance diodes for types 2CC24 and 2CC29

WITHDRAWN published on 1.1.1988

Designations for LiNbO3 LiTaO3 Bi12GeO20Bi12SiO20 piezoelectric crystals

WITHDRAWN published on 28.6.1988