Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD 203

WITHDRAWN published on 1.1.1988

Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD205A

WITHDRAWN published on 1.1.1988

Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG 2636

WITHDRAWN published on 1.1.1988

Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG3077

WITHDRAWN published on 1.1.1988

Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD204

WITHDRAWN published on 1.1.1988

Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207

WITHDRAWN published on 1.1.1988

Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207

WITHDRAWN published on 1.1.1988

(Detailed specifications of electronic components. 3DD325 silicon NPN. Environmental rated low frequency amplifying transistor (for certification))

WITHDRAWN published on 1.1.1988

Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplification

WITHDRAWN published on 1.1.1988

Detail specification for electronic component--Silicon single phase bridge rectifier type for QL 62

WITHDRAWN published on 1.1.1988