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Standards GB are Chinese national standards, which are issued by China's Standardization Administration Office (SAC).
Chinese national standards are used all over China commonly labeled as GB standards. They determine the united production requirements regarding product safety and quality .
GB standards are often modified or created according to the international standards of ISO, IEC or any other international level.
Although, they are largely harmonized, GB standards may differ from international standards .
Approximately 15% of all GB standards are obligatory and they can be identified according to the prefix GB, after which the code of the standards follows:
GB – Obligatory national standards
GB/T – Optional national standards
GB/Z – National steering technical document
Semiconductor devices—Semiconductor devices for energy harvesting and generation—Part 1: Vibration based piezoelectric energy harvesting
Execute Date: april 2027
Standard published on 28.9.2026
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Semiconductor devices—Semiconductor devices for energy harvesting and generation—Part 2: Thermo power based thermoelectric energy harvesting
Execute Date: april 2027
Standard published on 28.9.2026
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Semiconductor devices—Semiconductor devices for energy harvesting and generation—Part 3: Vibration based eletromagnetic energy harvesting
Execute Date: april 2027
Standard published on 28.9.2026
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Semiconductor devices—Semiconductor devices for energy harvesting and generation—Part 5Test method for measuring generated power from flexible thermoelectric devices
Execute Date: april 2027
Standard published on 28.9.2026
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Semiconductor devices—Semiconductor devices for energy harvesting and generation—Part 8: Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics
Execute Date: april 2027
Standard published on 28.9.2026
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Semiconductor devices—Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET)—Part 1: Test method for bias temperature instability
Execute Date: march 2027
Standard published on 28.8.2026
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Semiconductor devices—Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET)—Part 2: Test method for bipolar degradation due to body diode operation
Execute Date: march 2027
Standard published on 28.8.2026
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Method of performance testing for ambient ionization mass spectrometer
Execute Date: december 2026
Standard published on 28.8.2026
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Stress testing requirements of automotive multichip modulesMCM
Execute Date: march 2027
Standard published on 28.8.2026
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General rules for quantitative 1H nuclear magnetic resonance spectroscopy analysis by internal standard method
Execute Date: december 2026
Standard published on 28.8.2026
Selected format:Latest update: 2026-11-01 (Number of items: 2 208 794)
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