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Standards GB - Chinese national standards - Page 5447
Standards GB are Chinese national standards, which are issued by China's Standardization Administration Office (SAC).
Chinese national standards are used all over China commonly labeled as GB standards. They determine the united production requirements regarding product safety and quality .
GB standards are often modified or created according to the international standards of ISO, IEC or any other international level.
Although, they are largely harmonized, GB standards may differ from international standards .
Approximately 15% of all GB standards are obligatory and they can be identified according to the prefix GB, after which the code of the standards follows:
GB – Obligatory national standards
GB/T – Optional national standards
GB/Z – National steering technical document
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GB/T 10270-1988
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Determination of uranium in uranium hexafluoride by gravimetric method
WITHDRAWN published on 30.12.1988
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GB 10271-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG162
WITHDRAWN published on 1.1.1988
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GB 10272-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG182
WITHDRAWN published on 1.1.1988
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GB 10273-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG140
WITHDRAWN published on 1.1.1988
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GB 10274-1988
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Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS119
WITHDRAWN published on 1.1.1988
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GB 10275-1988
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Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1191
WITHDRAWN published on 1.1.1988
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GB 10276-1988
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Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS142
WITHDRAWN published on 1.1.1988
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GB 10277-1988
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Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1421
WITHDRAWN published on 1.1.1988
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GB 10278-1988
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Detail specification for electronic component N-channel single-gate junction type field-effect transistor of type CS422OA
WITHDRAWN published on 1.1.1988
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GB 10279-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG3130
WITHDRAWN published on 1.1.1988
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