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Standards GB - Chinese national standards - Page 6073
Standards GB are Chinese national standards, which are issued by China's Standardization Administration Office (SAC).
Chinese national standards are used all over China commonly labeled as GB standards. They determine the united production requirements regarding product safety and quality .
GB standards are often modified or created according to the international standards of ISO, IEC or any other international level.
Although, they are largely harmonized, GB standards may differ from international standards .
Approximately 15% of all GB standards are obligatory and they can be identified according to the prefix GB, after which the code of the standards follows:
GB – Obligatory national standards
GB/T – Optional national standards
GB/Z – National steering technical document
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GB/T 1414-1978
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General purpose screw threads for joints on pipe line--Dimensions
WITHDRAWN published on 15.8.1978
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GB/T 1414-2003
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General purpose metric screw threads—The plan for pipe systems
WITHDRAWN published on 22.5.2003
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GB/T 14140-2009
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Test method for measuring diameter of semiconductor wafer
WITHDRAWN published on 30.10.2009
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GB/T 14140.1-1993
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Silicon slices and wafers—Measuring of diameter—Optical projecting method
WITHDRAWN published on 6.2.1993
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GB/T 14140.2-1993
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Silicon slices and wafers—Measuring of diameter—Micrometer method
WITHDRAWN published on 6.2.1993
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GB/T 14141-1993
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Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
WITHDRAWN published on 6.2.1993
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GB/T 14142-1993
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Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
WITHDRAWN published on 6.2.1993
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GB/T 14143-1993
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300900m Silicon slices—Measuring of interstitial oxygen content—Infrared absorption method
WITHDRAWN published on 6.2.1993
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GB/T 14144-1993
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Test method for determination of radial interstitial oxygen variation in silicon
WITHDRAWN published on 6.2.1993
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GB/T 14145-1993
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Test method for stacking fault density of epitaxial layers of silicon by interference-contrast microscopy
WITHDRAWN published on 6.2.1993
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