DIN - German national standards  - Page 17272

Standards DIN - German national standards - Page 17272

DIN is a protected designation of German national technical standards.

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E DIN EN 62047-25:2014-05 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon-based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area.
(Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-Herstellungstechnologie - Messverfahren zur Zug-Druck- und Scherfestigkeit gebondeter Flächen im Mikrometerbereich.)

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E DIN EN 62047-26:2014-05 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures.
(Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 26: Beschreibung und Messverfahren für Mikro-Rillen und Nadelstrukturen.)

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E DIN EN 62047-27:2015-08 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 27: Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT).
(Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 27: Prüfung der Bondfestigkeit von Glasfritt gebondeten Strukturen unter Verwendung des Mikro-Chevron-Tests (MCT).)

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E DIN EN 62047-28:2015-09 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices.
(Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 28: Prüfverfahren der Funktionsfähigkeit für schwingungsbasierte MEMS-Elektret-Bauelemente zum Energy-Harvesting.)

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E DIN EN 62047-29:2016-08 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature.
(Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 29: Elektromechanisches Relaxations-Prüfverfahren für freistehende elektrisch leitende Dünnschichten bei Raumtemperatur.)

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E DIN IEC 62047-3:2004-08 WITHDRAWN

Microelectromechanical devices - Part 3: Thin film standard test piece.
(Bauteile der Mikrosystemtechnik - Teil 3: Dünnschicht-Standardmikroprobe.)

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E DIN EN 62047-30:2016-08 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film.
(Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 30: Messverfahren für Kenngrößen der elektromechanischen Energiewandlung bei piezoelektrischen MEMS-Dünnschichten.)

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E DIN IEC 62047-4:2006-09 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS.
(Halbleiterbauelemente - Bauteile der Mikrosystemtechnik - Teil 4: Fachgrundspezifikation für Bauteile der Mikrosystemtechnik.)

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E DIN IEC 62047-5:2008-02 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS Switches.
(Halbleiterbauelemente - Bauteile der Mikrosystemtechnik - Teil 5: Mikro-elektromechanische Schalter für Hochfrequenzanwendungen (HF-MEMS-Schalter).)

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E DIN IEC 62047-6:2007-07 WITHDRAWN

Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials.
(Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 6: Prüfverfahren zur uniaxialen Dauerschwingfestigkeit von Dünnschicht-Werkstoffen.)

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