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IEC/TR 63061-ed.1.0

Adjusted volume calculation for refrigerating appliances

Standard published on 22.5.2017

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122.10 USD


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IEC/TS 63064-ed.1.0

Graphical symbols for diagrams - Guidance on design for standardization in IEC 60617

Standard published on 23.1.2018

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122.10 USD


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IEC/TR 63065-ed.1.0

Guidelines for operation and maintenance of line commutated converter (LCC) HVDC converter station

Standard published on 15.9.2017

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450.10 USD


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IEC/TR 63065-ed.1.0/Amd.1 Change

Amendment 1 - Guidelines for operation and maintenance of line commutated converter (LCC) HVDC converter station

Change published on 3.6.2022

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30.50 USD


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IEC/TR 63065-ed.1.1+Amd.1-CSV

Guidelines for operation and maintenance of line commutated converter (LCC) HVDC converter station

Standard published on 3.6.2022

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831.50 USD


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IEC/TS 63066-ed.1.0

Low-voltage docking connectors for removable energy storage units

Standard published on 22.3.2017

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450.10 USD


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IEC 63067-ed.1.0

Electrical installations for lighting and beaconing of aerodromes - Connecting devices - General requirements and tests
(Installations electriques pour l´eclairage et le balisage des aerodromes - Dispositifs de connexion - Exigences generales et essais)

Standard published on 24.6.2020

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244.10 USD


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IEC 63068-1-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Standard published on 30.1.2019

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244.10 USD


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IEC 63068-2-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

Standard published on 30.1.2019

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244.10 USD


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IEC 63068-3-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
(Dispositifs a semiconducteurs - Criteres de reconnaissance non destructifs des defauts au sein d’une plaquette homoepitaxiale de carbure de silicium pour des dispositifs d’alimentation - Partie 3 : Methode d’essai pour les defauts a l’aide de la photoluminescence)

Standard published on 13.7.2020

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320.40 USD


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Entries shown from 10730 to 10740 out of a total of 11506 entries.


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