Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence

Standard published on 11.12.2019

Semiconductor devices - Part 6: Discrete devices - Thyristors

Standard published on 30.9.2025

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
(Dispositifs a semiconducteurs - Dispositifs discrets - Partie 7: Transistors bipolaires)

Standard published on 16.12.2010

Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
(Amendement 1 - Dispositifs a semiconducteurs - Dispositifs discrets - Partie 7: Transistors bipolaires)

Change published on 23.9.2019

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
(Dispositifs a semiconducteurs - Dispositifs discrets - Partie 7: Transistors bipolaires)

Standard published on 23.9.2019

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
(Dispositifs a semiconducteurs - Dispositifs descrets - Partie 8: Transistors a effet de champ)

Standard published on 15.12.2010

Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Change published on 25.6.2021

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Standard published on 25.6.2021

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
(Dispositifs a semiconducteurs - Partie 9: Dispositifs discrets - Transistors bipolaires a grille isolee (IGBT))

Standard published on 13.11.2019

Semiconductor devices - Integrated circuits - Part 1: General
(Dispositifs a semiconducteurs - Circuits integres - Partie 1: Generalites)

Standard published on 8.5.2002