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Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors (Includes all amendments And changes 12/31/2010).
Automatically translated name:
Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
STANDARD published on 1.7.2005
Designation standards: ASTM E1855-05e1
Note: WITHDRAWN
Publication date standards: 1.7.2005
SKU: NS-43328
The number of pages: 10
Approximate weight : 30 g (0.07 lbs)
Country: American technical standard
Category: Technical standards ASTM
Keywords:
displacement damage, neutron damage, radiation hardness, silicon transistors, spectrum sensors, ICS Number Code 31.200 (Integrated circuits. Microelectronics)
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1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors. 1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 10 12 n/cm2 and 1 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra. 1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use. |
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