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ASTM F1259-89
Guide for Design of Flat, Straight-Line Test Structures for Detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration
STANDARD published on 1.1.1989
The information about the standard:
Designation standards: ASTM F1259-89
Note: WITHDRAWN
Publication date standards: 1.1.1989
SKU: NS-49660
The number of pages: 2
Approximate weight : 6 g (0.01 lbs)
Country: American technical standard
Category: Technical standards ASTM
Annotation of standard text ASTM F1259-89 :
Keywords:
Accelerated aging/testing-semiconductors, Defects-semiconductors, Electrical conductors-semiconductors, Electromigration, Failure end point-electronic components/devices, Metallization, Microelectronic device processing, Resistance-failure, Silicon-semiconductor applications, Straight-line testing, Test structures, Time to failure, Voltage, design of flat straight-line test structures (for detecting, metallization open-circuit/resistance to increase failure due to, electromigration), guide
Additional information
| 1. Scope |
|
1.1 This guide covers recommended design features for test structures used in accelerated stress tests, as described in Test Method F1260, to characterize the failure distribution of interconnect metallizations that fail due to electromigration. 1.2 The guide is restricted to structures with a straight test line on a flat surface that are used to detect failures due to an open-circuit or a percent-increase in resistance of the test line. 1.3 This guide is not intended for test structures used to detect random defects in a metallization line. 1.4 Metallizations tested and characterized are those that are used in microelectronic circuits and devices. |
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