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ASTM F1725-02
Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)
STANDARD published on 10.12.2002
The information about the standard:
Designation standards: ASTM F1725-02
Note: WITHDRAWN
Publication date standards: 10.12.2002
SKU: NS-51313
The number of pages: 3
Approximate weight : 9 g (0.02 lbs)
Country: American technical standard
Category: Technical standards ASTM
Annotation of standard text ASTM F1725-02 :
Keywords:
dislocation, grain boundaries, ingot, polycrystaline imperfections, preferential etch, silicon, slip, ICS Number Code 29.045 (Semiconducting materials)
Additional information
| 1. Scope |
|
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting. 1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either p or n type with resistivity greater than 0.005 Ωcm. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. |
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