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ASTM F1725-97
Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots
STANDARD published on 10.6.1997
The information about the standard:
Designation standards: ASTM F1725-97
Note: WITHDRAWN
Publication date standards: 10.6.1997
SKU: NS-51314
The number of pages: 3
Approximate weight : 9 g (0.02 lbs)
Country: American technical standard
Category: Technical standards ASTM
Annotation of standard text ASTM F1725-97 :
Keywords:
dislocation, grain boundaries, ingot, polycrystaline imperfections, preferential etch, silicon, slip, ICS Number Code 29.045 (Semiconducting materials)
Additional information
| 1. Scope |
|
1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparations, etching solution selection and use, defect identification, and defect counting. 1.2 This practice is suitable for use if evaluating silicon grown in either (111) or (100) direction and doped either p or n type with resistivity greater than 0.005 Omega cm. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. |
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