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Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
STANDARD published on 31.12.2013
Designation standards: GB/T 14863-2013
Note: WITHDRAWN
Publication date standards: 31.12.2013
SKU: NS-349395
Country: Chinese technical standard
Category: Technical standards GB
Latest update: 2026-04-05 (Number of items: 2 271 011)
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