We need your consent to use the individual data so that you can see information about your interests, among other things. Click "OK" to give your consent.
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
STANDARD published on 23.8.2007
Designation standards: IEC 60747-4-ed.2.0
Publication date standards: 23.8.2007
SKU: NS-411299
The number of pages: 276
Approximate weight : 859 g (1.89 lbs)
Country: International technical standard
Category: Technical standards IEC
Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first edition, published in 1991, its amendments 1, 2 and 3 (1993, 1999 and 2001, respectively), and constitutes a technical revision. Donne les exigences pour les categories suivantes de dispositifs discrets: diodes a capacite variable et diodes a retour rapide, diodes melangeuses et diodes detectrices, diodes a avalanche, diodes a effet gunn, transistors bipolaires et transistors a effet de champ. Cette deuxieme edition annule et remplace la premiere edition, publiee en 1991, et ses amendements 1, 2 et 3 (1993, 1999 et 2001, respectivement) dont elle constitue une revision technique.
Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
(Amendement 1 - Dispositifs a semiconducteurs - Dispositifs discrets - Partie 4: Diodes et transistors hyperfrequences)
Change published on 30.1.2017
Selected format:
Do you want to make sure you use only the valid technical standards?
We can offer you a solution which will provide you a monthly overview concerning the updating of standards which you use.
Would you like to know more? Look at this page.
Latest update: 2026-03-15 (Number of items: 2 266 660)
© Copyright 2026 NORMSERVIS s.r.o.