GOST 18604.7-74
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IEC 60747-7-ed.3.0
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
STANDARD published on 16.12.2010
The information about the standard:
Designation standards: IEC 60747-7-ed.3.0
Publication date standards: 16.12.2010
SKU: NS-411315
The number of pages: 209
Approximate weight : 658 g (1.45 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60747-7-ed.3.0 :
IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. - Small signal transistors (excluding switching and microwave applications); - Linear power transistors (excluding switching, high-frequency, and microwave applications); - High-frequency power transistors for amplifier and oscillator applications; - Switching transistors for high speed switching and power switching applications; - Resistor biased transistors. The main changes with respect to previous edition are listed below. a) Clause 1 was amended by adding an item that should be included. b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included. c) The text of the second edition was combined with that of IEC 60747-7-5. This publication is to be read in conjunction with IEC 60747-1:2006. La CEI 60747-7:2010 donne les exigences applicables aux sous-categories suivantes de transistors bipolaires, a lexclusion des transistors micro-ondes. - Transistors petits signaux (a lexclusion des applications en commutation et en micro-ondes); - Transistors de puissance lineaire (a lexclusion des applications en commutation, a haute frequence et en micro-ondes); - Transistors de puissance haute frequence pour applications en amplificateurs et en oscillateurs; - Transistors de commutation pour applications en commutation a grande vitesse et en commutation de puissance; - Transistors a resistances de polarisation. Les principaux changements par rapport a ledition precedente sont enumeres ci-dessous. a) Larticle 1 a ete amende par lajout dun element quil convient dinclure. b) Les articles 3, 4, 5, 6 et 7 ont ete amendes en ajoutant des termes et des definitions, ainsi que des ajouts et suppressions adaptes quil convient dinclure. c) Le texte de la deuxieme edition a ete combine a la CEI 60747-7-5. Cette publication doit etre lue conjointement avec la CEI 60747-1:2006.
These changes apply to this standard:
IEC 60747-7-ed.3.0/Amd.1
Change
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Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
(Amendement 1 - Dispositifs a semiconducteurs - Dispositifs discrets - Partie 7: Transistors bipolaires)
Change published on 23.9.2019
Selected format:Show all technical information.
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