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IEC 60747-7-ed.3.1+Amd.1-CSV
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
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STANDARD published on 23.9.2019
The information about the standard:
Designation standards: IEC 60747-7-ed.3.1+Amd.1-CSV
Publication date standards: 23.9.2019
SKU: NS-1094742
The number of pages: 418
Approximate weight : 1285 g (2.83 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60747-7-ed.3.1+Amd.1-CSV :
IEC 60747-7:2010+A1:2019 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. - Small signal transistors (excluding switching and microwave applications); - Linear power transistors (excluding switching, high-frequency, and microwave applications); - High-frequency power transistors for amplifier and oscillator applications; - Switching transistors for high speed switching and power switching applications; - Resistor biased transistors. The main changes with respect to previous edition are listed below. a) Clause 1 was amended by adding an item that should be included. b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included. c) The text of the second edition was combined with that of IEC 60747-7-5. This publication is to be read in conjunction with IEC 60747-1:2006. This consolidated version consists of the third edition (2010) and its amendment 1 (2019). Therefore, no need to order amendments in addition to this publication. LIEC 60747-7:2010+A1:2019 donne les exigences applicables aux sous-categories suivantes de transistors bipolaires, a lexclusion des transistors micro-ondes. - Transistors petits signaux (a lexclusion des applications en commutation et en micro-ondes); - Transistors de puissance lineaire (a lexclusion des applications en commutation, a haute frequence et en micro-ondes); - Transistors de puissance haute frequence pour applications en amplificateurs et en oscillateurs; - Transistors de commutation pour applications en commutation a grande vitesse et en commutation de puissance; - Transistors a resistances de polarisation. Les principaux changements par rapport a ledition precedente sont enumeres ci-dessous. a) Larticle 1 a ete amende par lajout dun element quil convient dinclure. b) Les articles 3, 4, 5, 6 et 7 ont ete amendes en ajoutant des termes et des definitions, ainsi que des ajouts et suppressions adaptes quil convient dinclure. c) Le texte de la deuxieme edition a ete combine a lIEC 60747-7-5. Cette publication doit etre lue conjointement avec lIEC 60747-1:2006. Cette version consolidee comprend la troisieme edition (2010) et son amendement 1 (2019). Il nest donc pas necessaire de commander lamendement avec cette publication.
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