GOST 18604.7-74
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IEC 60747-8-ed.3.0
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
STANDARD published on 15.12.2010
The information about the standard:
Designation standards: IEC 60747-8-ed.3.0
Publication date standards: 15.12.2010
SKU: NS-411316
The number of pages: 155
Approximate weight : 496 g (1.09 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60747-8-ed.3.0 :
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) "Clause 3 Classification" was moved and added to Clause 1. b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006. La CEI 60747-8:2010 donne les normes pour les categories suivantes de transistors a effets de champ: - type A: type a jonction de grille; - type B: type a grille isolee a depletion (appauvrissement) (normalement a letat passant); - type C: type a grille isolee a enrichissement (normalement a letat bloque). Les principaux changements par rapport a ledition precedente sont enumeres ci-dessous. a) LArticle 3 "Classification" a ete deplace et ajoute a lArticle 1. b) LArticle 4 "Terminologie et symboles litteraux" a ete divise en Article 3 "Termes et definitions" et Article 4 "Symboles litteraux", ce dernier a ete amende avec des additions et des suppressions. c) Les Articles 5, 6 et 7 ont ete amendes avec les necessaires additions et suppressions. Cette publication doit etre lue conjointement avec la CEI 60747-1:2006.
These changes apply to this standard:
IEC 60747-8-ed.3.0/Amd.1
Change
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Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Change published on 25.6.2021
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