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IEC 60747-9-ed.3.0
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Translate name
STANDARD published on 13.11.2019
The information about the standard:
Designation standards: IEC 60747-9-ed.3.0
Publication date standards: 13.11.2019
SKU: NS-975468
The number of pages: 160
Approximate weight : 511 g (1.13 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60747-9-ed.3.0 :
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition:
- reverse-blocking IGBT and its related technical contents have been added;
- reverse-conducting IGBT and its related technical contents have been added;
- some parts of the previous edition have been amended, combined or deleted.
- ajout de transistor bipolaire a grille isolee bloque en inverse et du contenu technique associe;
- ajout de transistor bipolaire a grille isolee passant en inverse et du contenu technique associe;
- modification, combinaison ou suppression de certaines parties de l’edition precedente.
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