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IEC 60749-38-ed.1.0
Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
STANDARD published on 12.2.2008
The information about the standard:
Designation standards: IEC 60749-38-ed.1.0
Publication date standards: 12.2.2008
SKU: NS-411412
The number of pages: 26
Approximate weight : 78 g (0.17 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60749-38-ed.1.0 :
This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device. La presente partie de la CEI 60749 etablit une procedure de mesure de la predisposition aux erreurs logicielles des dispositifs a semiconducteurs a memoire lorsquils sont soumis a des particules energetiques telles que le rayonnement alpha. Deux essais sont decrits: un essai accelere utilisant une source de rayonnement alpha et un essai de systeme en temps reel (non accelere) dans lequel toutes les erreurs sont generees dans des conditions de rayonnement se produisant naturellement: il peut sagir du rayonnement alpha ou de tout autre rayonnement, neutronique par exemple. Pour une caracterisation complete de la capacite derreur logicielle dun circuit integre a memoire, il faut que le dispositif soit soumis a un essai pour le spectre large a haute energie et les neutrons thermiques en utilisant des methodes dessais complementaires. Cette methode dessai peut etre appliquee a tout type de circuit integre qui possede un dispositif de memoire.
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