Cookies
We need your consent to use the individual data so that you can see information about your interests, among other things. Click "OK" to give your consent.
IEC 60749-44-ed.1.0
Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
Translate name
STANDARD published on 21.7.2016
The information about the standard:
Designation standards: IEC 60749-44-ed.1.0
Publication date standards: 21.7.2016
SKU: NS-645489
The number of pages: 41
Approximate weight : 123 g (0.27 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60749-44-ed.1.0 :
IEC 60749-44:2016 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit. NOTE 1 - Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4. NOTE 2 - In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5. LIEC 60749-44:2016 etablit une procedure pour mesurer les effets dun evenement isole (SEE: Single Event Effect) sur des dispositifs a semiconducteurs pour circuits integres haute densite incluant laptitude des dispositifs a semiconducteurs a memoire a conserver les donnees lorsquils sont soumis a un rayonnement neutronique atmospherique produit par des rayons cosmiques. La sensibilite des effets dun evenement isole est mesuree pendant que le dispositif est irradie par un faisceau de neutrons dont le flux est connu. Cette methode dessai peut etre appliquee a nimporte quel type de circuit integre. NOTE 1 - Les dispositifs a semiconducteurs soumis a des contraintes de tension elevee peuvent etre sujets aux effets dun evenement isole, y compris un evenement isole de claquage (SEB: Single Event Burnout) et un evenement isole de claquage de grille (SEGR: Single Event Gate Rupture). Se reporter a lIEC 62396-4 pour plus dinformations sur ce phenomene qui nest pas couvert par le present document. NOTE 2 - Outre les neutrons denergie elevee, certains dispositifs peuvent avoir un taux derreurs logicielles en raison des neutrons thermiques de faible energie (<1 eV). Se reporter a lIEC 62396-5 pour plus dinformations sur ce phenomene qui nest pas couvert par le present document.
We recommend:
Technical standards updating
Do you want to make sure you use only the valid technical standards?
We can offer you a solution which will provide you a monthly overview concerning the updating of standards which you use.
Would you like to know more? Look at this page.
