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IEC 60749-5-ed.3.0
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
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STANDARD published on 19.12.2023
The information about the standard:
Designation standards: IEC 60749-5-ed.3.0
Publication date standards: 19.12.2023
SKU: NS-1161834
The number of pages: 17
Approximate weight : 51 g (0.11 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60749-5-ed.3.0 :
IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition: a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test; b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment; c) replacement of references to “virtual junction” with “die”. L’IEC 60749-5:2023 decrit un essai continu de duree de vie utilisant la temperature et l’humidite avec polarisation pour evaluer la fiabilite des dispositifs a semiconducteurs sous boitier non hermetique dans les environnements humides. Cette methode d’essai est consideree comme destructive. Cette edition inclut les modifications techniques majeures suivantes par rapport a ledition precedente: a) la specification de l’equipement d’essai est modifiee pour exiger la necessite de reduire le plus possible les gradients d’humidite relative et d’augmenter le plus possible la circulation d’air entre les dispositifs a semiconducteurs en essai; b) la specification des fixations de l’equipement d’essai est modifiee pour exiger la prevention de la condensation sur les dispositifs en essai et sur les fixations electriques reliant les dispositifs a l’equipement d’essai; c) le remplacement des references au terme "jonction virtuelle" par "pastille".
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