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IEC 60749-6-ed.2.0
Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
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STANDARD published on 3.3.2017
The information about the standard:
Designation standards: IEC 60749-6-ed.2.0
Publication date standards: 3.3.2017
SKU: NS-677382
The number of pages: 8
Approximate weight : 24 g (0.05 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 60749-6-ed.2.0 :
IEC 60749-6:2017 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43. This edition includes the following significant technical changes with respect to the previous edition: a) additional test conditions; b) clarification of the applicability of test conditions. L’IEC 60749-6:2017 a pour objet de soumettre a essai et de determiner, sur tous les dispositifs electroniques a semiconducteurs, l’effet du stockage a temperature elevee sans application de contrainte electrique. Cet essai est typiquement utilise pour determiner les effets de la duree d’exposition et de la temperature, dans des conditions de stockage, sur les modes de defaillance declenches par la chaleur et la duree de fonctionnement avant defaillance des dispositifs electroniques a semiconducteurs, comprenant les dispositifs a memoire non volatile (mecanismes de defaillance lies a la conservation de donnees). Cet essai est considere comme non destructif mais il convient de le privilegier pour la qualification des dispositifs. Si de tels dispositifs sont livres, il est necessaire d’evaluer les effets de cet essai de contrainte fortement accelere. Les modes de defaillance declenches par la chaleur sont modelises a partir de l’equation d’Arrhenius pour l’acceleration, et des recommandations concernant le choix des temperatures d’essai et des durees d’exposition peuvent etre consultees dans l’IEC 60749-43. Cette edition inclut les modifications techniques majeures suivantes par rapport a l’edition precedente: a) conditions d’essai supplementaires; b) clarification de l’applicabilite des conditions d’essai.
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