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Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
STANDARD published on 5.3.2015
Designation standards: IEC 62047-16-ed.1.0
Publication date standards: 5.3.2015
SKU: NS-583224
The number of pages: 21
Approximate weight : 63 g (0.14 lbs)
Country: International technical standard
Category: Technical standards IEC
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. LIEC 62047-16:2015 definit les methodes dessai permettant de mesurer les contraintes residuelles des films dont lepaisseur se situe dans la plage de 0,01 µ a 10 µ dans des structures fabriquees de microsystemes electromecaniques (MEMS) au moyen des methodes de la courbure de la plaquette ou de deviation de poutre en porte-a-faux.
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