Standard IEC 62047-17-ed.1.0 5.3.2015 preview

IEC 62047-17-ed.1.0

Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films



STANDARD published on 5.3.2015


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The information about the standard:

Designation standards: IEC 62047-17-ed.1.0
Publication date standards: 5.3.2015
SKU: NS-583225
The number of pages: 54
Approximate weight : 162 g (0.36 lbs)
Country: International technical standard
Category: Technical standards IEC

The category - similar standards:

Other semiconductor devices

Annotation of standard text IEC 62047-17-ed.1.0 :

IEC 62047-17:2015 specifies the method for performing bulge tests on the free-standing film that is bulged within a window. The specimen is fabricated with micro/nano structural film materials, including metal, ceramic and polymer films, for MEMS, micromachines and others. The thickness of the film is in the range of 0,1 µ to 10 µ, and the width of the rectangular and square membrane window and the diameter of the circular membrane range from 0,5 mm to 4 mm. The tests are carried out at ambient temperature, by applying a uniformly-distributed pressure to the testing film specimen with bulging window. Elastic modulus and residual stress for the film materials can be determined with this method. LIEC 62047-17:2015 specifie la methode permettant deffectuer des essais de renflement sur une couche autonome bombee dans une fenetre. Le specimen est fabrique avec des materiaux de couche de structure micrometrique ou nanometrique, y compris les couches en metal, ceramique et polymere, pour des MEMS, des micromachines et autres. Lepaisseur du film est comprise entre 0,1 µ et 10 µ et la largeur de la fenetre a membrane rectangulaire et carree ainsi que le diametre de la membrane circulaire sont compris entre 0,5 mm et 4 mm. Les essais sont effectues a temperature ambiante par lapplication dune pression uniformement repartie sur le specimen de couche dessai avec fenetre bombee. Le module delasticite et la contrainte residuelle des materiaux de la couche peuvent etre determines avec cette methode.

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