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IEC 62047-25-ed.1.0
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
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STANDARD published on 29.8.2016
The information about the standard:
Designation standards: IEC 62047-25-ed.1.0
Publication date standards: 29.8.2016
SKU: NS-650596
The number of pages: 45
Approximate weight : 135 g (0.30 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 62047-25-ed.1.0 :
IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. LIEC 62047-25:2016 specifie la methode dessai in situ pour mesurer la resistance de brasure dune microzone de brasure fabriquee par des technologies de micro-usinage utilisees dans un systeme microelectromecanique (MEMS) a base de silicium. Le present document sapplique a la mesure in situ de la resistance a la traction-compression et de la resistance au cisaillement dune microzone de brasure fabriquee par un processus microelectronique et dautres technologies de micro-usinage.
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