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IEC 62880-1-ed.1.0
Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
Translate name
STANDARD published on 23.8.2017
The information about the standard:
Designation standards: IEC 62880-1-ed.1.0
Publication date standards: 23.8.2017
SKU: NS-693522
The number of pages: 24
Approximate weight : 72 g (0.16 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 62880-1-ed.1.0 :
IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.
