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IEC 63068-2-ed.1.0
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
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STANDARD published on 30.1.2019
The information about the standard:
Designation standards: IEC 63068-2-ed.1.0
Publication date standards: 30.1.2019
SKU: NS-935987
The number of pages: 25
Approximate weight : 75 g (0.17 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63068-2-ed.1.0 :
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
