Cookies
We need your consent to use the individual data so that you can see information about your interests, among other things. Click "OK" to give your consent.
IEC 63275-1-ed.1.0
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
Translate name
STANDARD published on 21.4.2022
The information about the standard:
Designation standards: IEC 63275-1-ed.1.0
Publication date standards: 21.4.2022
SKU: NS-1055629
Approximate weight : 300 g (0.66 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63275-1-ed.1.0 :
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h). L’IEC 63275-1:2022 donne une methode d’essai pour evaluer le decalage de la tension de seuil de grille des transistors a effet de champ metal-oxyde-semiconducteurs (MOSFET) de puissance en carbure de silicium (SiC) en utilisant un releve a temperature ambiante apres avoir applique une contrainte de tension grille-source positive continue a temperature elevee. La methode proposee accepte une certaine quantite de recouvrement en autorisant des decalages importants entre la contrainte et la mesure (jusqu’a 10 h).
We recommend:
Updating of laws
Do you want to be sure about the validity of used regulations?
We offer you a solution so that you could use valid and updated legislative regulations.
Would you like to get more information? Look at this page.
