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IEC 63373-ed.1.0
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
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STANDARD published on 10.2.2022
The information about the standard:
Designation standards: IEC 63373-ed.1.0
Publication date standards: 10.2.2022
SKU: NS-1049408
The number of pages: 28
Approximate weight : 84 g (0.19 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63373-ed.1.0 :
IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices; b) GaN integrated power solutions; c) the above in wafer and package levels. The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications. IEC 63373:2022 En regle generale, l’essai de resistance dynamique a l’etat passant est une mesure des phenomenes de piegeage de charge dans les transistors de puissance en GaN. LIEC 63373:2022 donne des lignes directrices pour l’essai de resistance dynamique a l’etat passant des solutions de transistors de puissance lateraux en GaN. Les methodes d’essai peuvent etre appliquees aux elements suivants: a) dispositifs de puissance discrets en GaN a mode d’enrichissement et de depletion; b) solutions de puissance integrees en GaN; c) dispositifs et solutions ci-dessus au niveau des plaquettes et des boitiers. Les methodes d’essai specifiees peuvent etre utilisees pour la caracterisation des dispositifs, les essais de production, les evaluations de fiabilite et les evaluations de l’application des dispositifs de conversion de puissance en GaN. Le present document n’est pas destine a couvrir les mecanismes sous-jacents de la resistance dynamique a l’etat passant et sa representation symbolique pour les specifications du produit.
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