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IEC 63601-ed.1.0
Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion
Translate name
STANDARD published on 3.2.2026
The information about the standard:
Designation standards: IEC 63601-ed.1.0
Publication date standards: 3.2.2026
SKU: NS-1260470
The number of pages: 44
Approximate weight : 132 g (0.29 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63601-ed.1.0 :
IEC 63601:2026 covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS (N-type MOS) devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS (P-type MOS) devices as well. This document does not define device failure criteria, acceptable use conditions or acceptable lifetime targets. That is up to the device manufacturers and users. However, it provides stress procedures such that the threshold voltage stability over time as affected by gate bias and temperature can be demonstrated and evaluated.
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