Cookies
We need your consent to use the individual data so that you can see information about your interests, among other things. Click "OK" to give your consent.
ISO 12406:2010
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
Automatically translated name:
Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of arsenic in silicon
STANDARD published on 8.11.2010
The information about the standard:
Designation standards: ISO 12406:2010
Publication date standards: 8.11.2010
SKU: NS-423985
The number of pages: 13
Approximate weight : 39 g (0.09 lbs)
Country: International technical standard
Category: Technical standards ISO
The category - similar standards:
Annotation of standard text ISO 12406:2010 :
Description / Abstract: ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
We recommend:
Updating of laws
Do you want to be sure about the validity of used regulations?
We offer you a solution so that you could use valid and updated legislative regulations.
Would you like to get more information? Look at this page.
