We need your consent to use the individual data so that you can see information about your interests, among other things. Click "OK" to give your consent.
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
Automatically translated name:
Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of arsenic in silicon
STANDARD published on 8.11.2010
Designation standards: ISO 12406:2010
Publication date standards: 8.11.2010
SKU: NS-423985
The number of pages: 13
Approximate weight : 39 g (0.09 lbs)
Country: International technical standard
Category: Technical standards ISO
Description / Abstract: ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
Do you want to make sure you use only the valid technical standards?
We can offer you a solution which will provide you a monthly overview concerning the updating of standards which you use.
Would you like to know more? Look at this page.
Latest update: 2025-10-05 (Number of items: 2 237 498)
© Copyright 2025 NORMSERVIS s.r.o.