Standards JIS - Japanese technical standards - Page 605

Measurement of minority carrier life time in germanium by photoconductive decay method

Standard published on 31.3.1978

Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method

Standard published on 31.7.1995

Determination of conductivity type in germanium by thermoelectromotive method

Standard published on 10.3.1978

Test methods of crystalline defects in silicon by preferential etch techniques

Standard published on 29.2.2000

Method of measurement of etch pit density of germanium crystal

Standard published on 31.1.1967

Methods of measurement of thickness, thickness variation and bow for silicon wafer

Standard published on 28.2.1994

Visual inspection for sliced and lapped silicon wafers

Standard published on 5.1.1978

Visual inspection for silicon wafers with specular surfaces

Standard published on 31.1.1996

Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

Standard published on 21.9.2021

General rules for chemical analysis of copper and copper alloys

Standard published on 31.1.2001